CISSOID releases HADES® v2, an Isolated Gate Driver for High Power Density Applications





CISSOID, the leader in high temperature and extended lifetime semiconductor solutions, introduces its 2nd generation of HADES® , a highly integrated isolated gate driver. HADES® is aimed at high density power converters, motor drives and actuators based either on fast switching Silicon Carbide (SiC) transistors, traditional power MOSFETs and IGBTs. Leveraging on the unparalleled robustness of CISSOID products, the gate driver HADES® v2 brings high reliability and extended life time in harsh environments and hence meets the expectations of system designers for aeronautics, automotive, industrial and oil & gas markets.

HADES® is available in hermetic packages for extreme temperature applications up to 225°C, as well as in plastic packages for systems where extended life time is the priority and temperature doesn’t exceed 175°C.

The chipset uses three integrated circuits: HADES2P on the primary side, HADES2S on the secondary, and the recently introduced quad-diode ELARA. Both primary and secondary chips come in ceramic QFP 32 pins or in plastic QFP 44 pins.

The primary side IC (HADES2P) embeds a current-mode fly-back controller with an integrated 0.8Ohm - 80V switch, configurable non-overlapping and Under-Voltage Lockout (UVLO) fault management. It also includes a four channels isolated signal transceiver (2 Tx and 2 Rx) for PWM and fault signals transmission towards or back from secondary side through tiny pulse transformers.

The two secondary side ICs (HADES2S), one for the high side and one for the low side, include a 12A driver, UVLO, Desaturation and Over Temperature Protection (OTP) fault detection circuits, as well as a two channels isolated signal transceiver.

An Evaluation Kit (EVK-HADES2) is also available, which demonstrates a half-bridge built on the HADES v2 gate driver and two CISSOID’s NEPTUNE, a 10A/1200V SiC Mosfet. The kit includes a demonstration board with the half-bridge and the full documentation. The board is only 60mm x 55mm (2.4” x 2.2”). HADES® v2 can drive higher power and other types of switches, including IGBTs and traditional MOSFETS. Support for GaN transistors is also foreseen in the near future.

HADES® v2 chipset has been optimized to minimize the number and size of active and passive components to make possible its integration inside Intelligent Power Modules (IPMs) where the gate driver is next to the power switches. HADES® integration into IPMs will further increase converters power density and enables reliable operation up to high temperature, either for very long lifetime (tens of years) in 100~175°C applications, or for thousands of hours at extreme temperature applications (175°C~225°C).

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